PART |
Description |
Maker |
2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor Bipolar Transistor Adoption of FBET, MBIT processes Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
2SB1143S 2SB1143T 2SD1683S |
Bipolar Transistor Bipolar Transistor Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML
|
ON Semiconductor
|
IRG4PC50S IRG4PC50SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A) INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
IRGBC20F |
600V Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
IRGPC50S |
600V Discrete IGBT in a TO-3P (TO-247AC) package INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
2N3767SMD |
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS
|
Seme LAB
|
BC461-5 SEMELABLTD-BC461-5E1 |
2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-5 Bipolar PNP Device in a Hermetically sealed TO39 Metal Package
|
SEMELAB LTD Seme LAB
|
BFP360 BFP360W |
RF-Bipolar - NPN Silicon RF transistor in 4pin SOT343 package ideal for Oscillators and VCOs up to 4GHz
|
http:// Infineon Technologies AG
|
IRG4PC60F |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
BFR340F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Noise Amplifiers and Oscillators
|
INFINEON[Infineon Technologies AG]
|
IRGPH50KD2 2017 |
1200V Copack IGBT in a TO-3P (TO-247AC) package From old datasheet system INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条) INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A) 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp. IRF[International Rectifier]
|